Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Author

Zhi Luo ; Hon Kit Lau ; Chan, P.K.L. ; Chi Wah Leung

Author_Institution

Dept. of Electron. Eng., Jinan Univ., Guangzhou, China

Volume

50

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

1

Lastpage

4

Abstract

Resistive switching effect was demonstrated in the Ti/Pr_0.7Ca_0.3MnO₃ (PCMO)/LaNiO₃/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.

Keywords

MIM devices; calcium compounds; capacitor switching; electrical resistivity; electrodes; forming processes; lanthanum compounds; praseodymium compounds; random-access storage; titanium; I-V characteristics; Ti electrode-PCMO interface region; Ti-Pr_0.7Ca_0.3MnO₃-LaNiO₃-Ti; forming process; high-density applications; hysteretic current-voltage characteristic; nonvolatile memory applications; perovskite-oxide capacitor-type devices; resistance state; resistive switching effect; top-down device structure; Current measurement; Electrical resistance measurement; Electrodes; Magnetic hysteresis; Nonvolatile memory; Resistance; Switches; Nonvolatile memories; Pr0.7Ca0.3MnO3 (PCMO); resistive switching;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2013.2297408

Filename

6851336