Title :
Resistive Switching in Perovskite-Oxide Capacitor-Type Devices
Author :
Zhi Luo ; Hon Kit Lau ; Chan, P.K.L. ; Chi Wah Leung
Author_Institution :
Dept. of Electron. Eng., Jinan Univ., Guangzhou, China
Abstract :
Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3 (PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.
Keywords :
MIM devices; calcium compounds; capacitor switching; electrical resistivity; electrodes; forming processes; lanthanum compounds; praseodymium compounds; random-access storage; titanium; I-V characteristics; Ti electrode-PCMO interface region; Ti-Pr0.7Ca0.3MnO3-LaNiO3-Ti; forming process; high-density applications; hysteretic current-voltage characteristic; nonvolatile memory applications; perovskite-oxide capacitor-type devices; resistance state; resistive switching effect; top-down device structure; Current measurement; Electrical resistance measurement; Electrodes; Magnetic hysteresis; Nonvolatile memory; Resistance; Switches; Nonvolatile memories; Pr0.7Ca0.3MnO3 (PCMO); resistive switching;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2013.2297408
