DocumentCode :
883072
Title :
Generation of transient response of nonlinear bipolar transistor circuits from device fabrication data
Author :
Hajj, Ibrahim N. ; Roulston, David J. ; Bryant, Peter R.
Volume :
12
Issue :
1
fYear :
1977
fDate :
2/1/1977 12:00:00 AM
Firstpage :
29
Lastpage :
38
Abstract :
Dynamic models of double diffused bipolar transistors are generated from device fabrication data. The models consist of interconnections of two- and three-terminal resistors and capacitors whose characteristics are expressed in the form of tabulated values describing piecewise-linear surfaces. A circuit analysis program based on a piecewise-linear approach, simulates the time responses of circuits in which the transistors are imbedded. DC and small-signal AC analyses are also obtained. The computer program package thus yields overall circuit responses with fabrication data as input.
Keywords :
Bipolar transistor circuits; Circuit analysis computing; Nonlinear network analysis; Piecewise-linear techniques; Semiconductor device models; bipolar transistor circuits; circuit analysis computing; nonlinear network analysis; piecewise-linear techniques; semiconductor device models; Bipolar transistor circuits; Bipolar transistors; Capacitors; Circuit analysis; Computational modeling; Fabrication; Integrated circuit interconnections; Piecewise linear techniques; Resistors; Transient response;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1977.1050837
Filename :
1050837
Link To Document :
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