Inkjetted crystalline single monolayer oligothiophene OTFTs

Author

Chang, Paul C. ; Molesa, Steven E. ; Murphy, Amanda R. ; Fréchet, Jean M J ; Subramanian, Vivek

Author_Institution

IBM Semicond. R&D Center, Hopewell Junction, NY, USA

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

594

Lastpage

600

Abstract

Crystalline monolayer films of a novel organic semiconducting material were deposited as the active layer for organic thin-film transistors (OTFTs) via inkjet printing. Devices exhibited field-effect mobilities up to 0.07 cm²/V·s and on/off ratios >10⁸, surpassing values measured for devices cast with thicker films of the same material. The printed monolayer devices exhibited superior subthreshold characteristics with less hysteresis, and defect and trap densities are improved over thicker film analogs. These results show that solution deposition techniques such as inkjet printing can result in the monolayer crystalline thin films that are requisite for near-ideal electrostatics in OTFTs.

Keywords

monolayers; organic semiconductors; thin film transistors; OTFT; crystalline monolayer films; deposition techniques; field-effect mobilities; inkjet printing; monolayer crystalline thin films; near-ideal electrostatics; organic semiconducting material; organic thin-film transistors; printed monolayer devices; superior subthreshold characteristics; Crystalline materials; Crystallization; Organic materials; Organic thin film transistors; Printing; Semiconductivity; Semiconductor films; Semiconductor materials; Thickness measurement; Thin film transistors; Inkjet; monolayer; oligothiophene; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870885

Filename

1610884