Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

Author

Kao, H.L. ; Chin, Albert ; Liao, C.C. ; Chen, C.C. ; McAlister, Sean P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

636

Lastpage

642

Abstract

In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NF_min) of RF MOSFETs. A low NF_min of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NF_min, we have developed a self-consistent dc current-voltage, S-parameter, and NF_min model, where the simulated results match the measured device characteristics well, both before and after electrical stress.

Keywords

MOSFET; electric noise measurement; microstrip lines; microwave field effect transistors; semiconductor device models; semiconductor device noise; stress effects; 0.18 micron; 1.05 dB; 10 GHz; RF MOSFET; device modeling; electrical stress effects; microstrip line layout; minimum noise figure measurements; Analytical models; Current measurement; Electric variables measurement; MOSFETs; Microstrip; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Stress measurement; Lifetime; RF noise; minimum noise figure (; model; stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870284

Filename

1610890