DocumentCode :
883261
Title :
Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs
Author :
Kao, H.L. ; Chin, Albert ; Liao, C.C. ; Chen, C.C. ; McAlister, Sean P. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
53
Issue :
4
fYear :
2006
fDate :
4/1/2006 12:00:00 AM
Firstpage :
636
Lastpage :
642
Abstract :
In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-μm MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NFmin model, where the simulated results match the measured device characteristics well, both before and after electrical stress.
Keywords :
MOSFET; electric noise measurement; microstrip lines; microwave field effect transistors; semiconductor device models; semiconductor device noise; stress effects; 0.18 micron; 1.05 dB; 10 GHz; RF MOSFET; device modeling; electrical stress effects; microstrip line layout; minimum noise figure measurements; Analytical models; Current measurement; Electric variables measurement; MOSFETs; Microstrip; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Stress measurement; Lifetime; RF noise; minimum noise figure (; model; stress;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.870284
Filename :
1610890
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883261
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