• DocumentCode
    883277
  • Title

    Vapour growth of multilayered GaAs structures for series operation of transferred-electron oscillators

  • Author

    Enstrom, R.E. ; Reynolds, J.F. ; Berson, B.E.

  • Author_Institution
    RCA Laboratories, David Sarnoff Research Center, Princeton, USA
  • Volume
    5
  • Issue
    26
  • fYear
    1969
  • Firstpage
    714
  • Lastpage
    715
  • Abstract
    Series operation of GaAs transferred-electron oscillators has been obtained by the in situ vapour growth of n+¿n¿n+¿n¿n+ structures. Devices fabricated from this structure have operated at n/f ratios as high as 3.2 × 105 s cm¿3 and have yielded conversion efficiencies as high as 13.5% at 4.0 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; microwave oscillators; oscillators; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690535
  • Filename
    4210749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883277