A novel model of the gate current in heterojunction FETs

Author

Fawaz, Hussein ; Gest, Joel ; Zimmermann, Jacques

Author_Institution

Dept. of Hyperfrequences et Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

846

Lastpage

851

Abstract

The authors present a model of the gate current in heterojunction FETs that takes into account two-dimensional electron gas effects at the heterojunction interface. The gate current results from tunnel and thermionic contributions. This model takes into account a number of technological parameters such as heterojunction barrier height, threshold voltage, gate length, and temperature. It has been tested against experimental measurements of gate current in AlGaAs/GaAs MISFETs at various temperatures. The agreement has been found quite satisfactory in a large range of temperatures

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; semiconductor device models; tunnelling; two-dimensional electron gas; AlGaAs-GaAs; MISFETs; gate current; gate length; heterojunction FETs; heterojunction barrier height; model; thermionic contributions; threshold voltage; tunnel contribution; two-dimensional electron gas effects; Current measurement; Electrons; FETs; Gallium arsenide; Helium; Heterojunctions; MISFETs; Temperature distribution; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210189

Filename

210189