DocumentCode
883291
Title
The Schottky I/sup 2/L technology and its application in a 24x9 sequential access memory
Author
Hewlett, Frank W., Jr. ; Ryden, W.D.
Volume
12
Issue
2
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
119
Lastpage
123
Abstract
The Schottky I/SUP 2/L device and a two-level metal scheme have been used to fabricate a 24/spl times/9 sequential access memory. The T/SUP 2/L compatible chip has 1287 Schottky I/SUP 2/L gates, operates at 60 mA, and requires an area of 13200 mil/SUP 2/. Details of the Schottky I/SUP 2/L technology and its application in a 24/spl times/9 sequential memory are discussed.
Keywords
Bipolar integrated circuits; Integrated logic circuits; Integrated memory circuits; bipolar integrated circuits; integrated logic circuits; integrated memory circuits; Boron; Dielectrics; Impurities; Integrated circuit interconnections; Plasma applications; Plasma density; Silicon; Surfaces; Temperature; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050858
Filename
1050858
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