Title :
GaAsSb for heterojunction bipolar transistors
Author :
Ikossi-Anastasiou, Kiki
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The advantages of using GaAsSb in heterojunction bipolar transistors (HBT) are discussed with emphasis on two recent experimental results in the AlGaAs/GaAsSb material system. The performances of a prototype n-p-n AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits stable current gain with maximum collector current density of 5×10 4 A/cm2, and a p-n-p AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact which has a specific contact resistivity of 5±1×10-7 Ω-cm2 across the sample, are examined
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; semiconductor superlattices; AlGaAs-GaAsSb-GaAs; HBT; I-V characteristics; collector current density; heterojunction bipolar transistors; ideality factor; n-p-n double HBT; specific contact resistivity; stable current gain; superlattice GaAsSb emitter ohmic contact; Crystalline materials; Current density; Doping; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Ohmic contacts; Performance gain; Prototypes; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
