Title :
Analysis of subthreshold carrier transport for ultimate DGMOSFET
Author :
Jung, Hak Kee ; Dimitrijev, Sima
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Qld., Australia
fDate :
4/1/2006 12:00:00 AM
Abstract :
A novel transport model for the subthreshold mode of double-gate MOSFETs (DGMOSFETs) is proposed in this paper. The model enables the analysis of short-channel effects (SCEs) such as the subthreshold swing (SS), the threshold-voltage rolloff, and the drain-induced barrier lowering. The proposed model includes the effects of thermionic emission and the quantum tunneling of carriers through the source-drain barrier. An approximative solution of the two-dimensional Poisson equation is used for the distribution of the electric potential, and the Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The model is verified by comparing the SS with numerical simulations. The new model is used to investigate the subthreshold characteristics of a DGMOSFET having the gate length in the nanometer range with an ultrathin gate oxide and channel thickness. The SCEs degrade the subthreshold characteristics of DGMOSFETs when the gate length is reduced below 10 nm, and any design in the sub-10-nm-regime should include the effects of quantum tunneling.
Keywords :
MOSFET; Poisson equation; semiconductor device models; tunnelling; 2D Poisson equation; Wentzel-Kramers-Brillouin approximation; carrier transport; double gate MOSFET; electric potential; quantum tunneling; short channel effects; subthreshold swing; thermionic emission; transport model; tunneling probability; Australia; CMOS technology; Degradation; Integrated circuit modeling; MOSFETs; Microelectronics; Numerical simulation; Poisson equations; Thermionic emission; Tunneling; Double-gate MOSFET (DGMOSFET); drain-induced barrier lowering (DIBL); short-channel effect (SCE); subthreshold swing (SS); threshold-voltage rolloff; tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870282
