Accurate extraction of contact resistivity on Kelvin D-resistor structures using universal curves from simulation

Author

Santander, Joaquín ; Lozano, Manuel ; Cané, Carles

Author_Institution

Centro Nacional de Microelectronica, Bellaterra, Spain

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

944

Lastpage

950

Abstract

An accurate procedure to extract contact resistivity of metal-semiconductor contacts from contact resistance measurements made on a D-resistor-type Kelvin cross test structure is presented. The effects of spreading currents are taken into account through simulation and a set of universal curves that eliminates the need of further simulations is computed. The values given can be incorporated in any contact resistance measurement routine to extract the actual value of contact resistivity along with an estimation of the error. The two-dimensional model is validated with experimental results

Keywords

contact resistance; electric resistance measurement; ohmic contacts; semiconductor-metal boundaries; Kelvin D-resistor structures; Kelvin cross test structure; contact resistance measurement; contact resistivity; error estimation; metal-semiconductor contacts; ohmic contacts; simulation; spreading currents; two-dimensional model; universal curves; Computational modeling; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Fabrication; Kelvin; Ohmic contacts; Resistors; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210203

Filename

210203