Title :
Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson´s equation
Author :
Havaldar, Dnyanesh S. ; Katti, Guruprasad ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
fDate :
4/1/2006 12:00:00 AM
Abstract :
The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson´s equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation of subthreshold slope and threshold voltage with device geometry and doping concentration in the channel has been studied.
Keywords :
MOSFET; Poisson equation; semiconductor device models; 3D Poisson equation; FinFET; device geometry; doping concentration; fin field-effect transistors; subthreshold current model; Doping; FETs; FinFETs; MOSFETs; Poisson equations; Semiconductor process modeling; Shape control; Silicon on insulator technology; Subthreshold current; Threshold voltage; Analytical model; fin field-effect transistor (FinFET); subthreshold current; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870874
