• DocumentCode
    883451
  • Title

    Neuron MOS binary-logic integrated circuits. II. Simplifying techniques of circuit configuration and their practical applications

  • Author

    Shibata, Tadashi ; Ohmi, Tadahiro

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • Volume
    40
  • Issue
    5
  • fYear
    1993
  • fDate
    5/1/1993 12:00:00 AM
  • Firstpage
    974
  • Lastpage
    979
  • Abstract
    For pt.I see ibid., vol.40, no.3, p.570-6 (March 1993). The fundamental circuit ideas developed by the authors in Part I are applied to practical circuits, and the impact of neuron MOSFET on the implementation of binary-logic circuits is examined. For this purpose, two techniques are presented to simplify the circuit configurations. It is shown that the input-stage D/A converter circuit in the basic configuration can be eliminated without any major problems, resulting in improved noise margins and speed performance. Then a design technique for symmetric functions, which is especially important when the number of input variables increases, is presented. The νMOS logic design is characterized by a large reduction in the number of transistors as well as of interconnections. However, the decrease in transistor count comes at a cost in process tolerance due to the multivalued nature of the device operation. Test circuits were fabricated by a typical double-polysilicon CMOS process, and the measurement results are presented
  • Keywords
    CMOS integrated circuits; MOS integrated circuits; integrated logic circuits; logic design; many-valued logics; neural chips; νMOS logic design; circuit configuration; double-polysilicon CMOS process; input-stage D/A converter circuit; neuron MOS binary logic ICs; neuron MOSFET; noise margins; speed performance; symmetric function design; Adders; Circuit noise; Circuit testing; Input variables; Integrated circuit interconnections; Inverters; Logic circuits; Logic design; MOSFET circuits; Neurons;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.210207
  • Filename
    210207