Title :
I/sup 2/L current gain design
Author :
Hewlett, Frank W., Jr.
fDate :
4/1/1977 12:00:00 AM
Abstract :
A DC model useful for I/SUP 2/L upward current gain (/spl beta//SUB /spl mu//) design is described. An expression for /spl beta//SUB /spl mu// is obtained in terms of model parameters which are related to device morphology. Design parameters are identified for a standard bipolar technology and a minimum geometry cell.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; Semiconductor device models; bipolar integrated circuits; integrated logic circuits; semiconductor device models; Bipolar transistors; Current density; Doping; Electrical resistance measurement; Electrons; Logic circuits; Photonic band gap; Predictive models; Solid modeling; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050873
