Title :
I/sup 2/L DC functional requirements
Author :
Davies, Roderick D. ; Estreich, Donald B. ; Meindl, James D. ; Dutton, Robert W.
fDate :
4/1/1977 12:00:00 AM
Abstract :
Factors controlling the DC operational limits of integrated injection logic (I/SUP 2/L) imposed by the interaction between the inverse n-p-n switching transistors and the lateral p-n-p transistor formed with the injector are discussed. The operational limit is shown to be a function only of structural and doping level parameters. An upper limit on epitaxial resistivity is shown to result.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Charge carrier processes; Current measurement; Doping; Geometry; Influenza; Logic devices; Predictive models; Propagation delay; Solid modeling; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050874
