DocumentCode :
88348
Title :
A 2.7 GHz to 7 GHz Fractional-N LC-PLL Utilizing Multi-Metal Layer SoC Technology in 28 nm CMOS
Author :
Chang-Hyeon Lee ; Kabalican, Lindel ; Yan Ge ; Kwantono, Hendra ; Unruh, Greg ; Chambers, Mark ; Fujimori, Ichiro
Author_Institution :
Broadcom Corp., Irvine, CA, USA
Volume :
50
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
856
Lastpage :
866
Abstract :
A fractional-N LC-PLL in 28 nm CMOS that uses vertical layout integration techniques to achieve area reduction without performance penalties is proposed. The design utilizes multi-metal layers to vertically integrate dual interposed inductors on top of the active PLL circuit elements, resulting in an area of 0.07 mm2. The PLL covers a wide-frequency range from 2.7 GHz to 7 GHz, consuming a total power of 14 mW. At 7 GHz, the RMS jitter is 0.56 ps in integer mode and 1.1 ps in fractional mode.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; inductors; integrated circuit design; microwave integrated circuits; phase locked loops; system-on-chip; CMOS technology; active PLL circuit element; dual interposed inductor; fractional-N LC-PLL; frequency 2.7 GHz to 7 GHz; multimetal layer SoC technology; power 14 mW; size 28 nm; time 0.56 ps; time 1.1 ps; vertical layout integration technique; Inductors; Metals; Noise; Phase locked loops; Substrates; Switches; Voltage-controlled oscillators; LC-PLL; active loop filter; capacitor multiplier; fractional-N synthesizers; patterned ground shield; spiral inductor;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2371136
Filename :
6982234
Link To Document :
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