DocumentCode :
883509
Title :
Noise behavior of avalanching silicon diodes
Author :
Minden, H.T.
Volume :
54
Issue :
8
fYear :
1966
Firstpage :
1124
Lastpage :
1125
Keywords :
Diodes; Electric breakdown; Fires; Noise measurement; P-n junctions; Power measurement; Resistors; Silicon; Space vector pulse width modulation; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5048
Filename :
1446978
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883509
