Title :
0.1-μm-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer
Author :
Omura, Y. ; Nakashima, S. ; Izumi, K. ; Ishii, T.
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
5/1/1993 12:00:00 AM
Abstract :
A 0.1-μm-gate CMOS/SIMOX is fabricated using high-quality SIMOX substrates with a sub-100-nm-thick buried oxide layer. In addition, 0.085-μm-gate nMOSFETs/SIMOX and pMOSFETs/SIMOX with 8-nm-thick silicon active layers have been fabricated. The prospects for improving the performance of 0.1-μm-gate CMOS/SIMOX devices are discussed in detail
Keywords :
CMOS integrated circuits; SIMOX; insulated gate field effect transistors; 0.1 micron; 80 nm; CMOS ring oscillators; CMOS/SIMOX devices; I-V characteristics; SIMOX substrate; buried oxide layer; nMOSFETs/SIMOX; pMOSFETs/SIMOX; switching performance; Analytical models; CMOS technology; Electrons; Etching; Fabrication; MOSFET circuits; Silicon compounds; Substrates; Temperature dependence; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
