Title :
New high-rate dry etch mixture for INP-based heterostructures
Author :
Pearton, S.J. ; Chakrabarti, U.K. ; Coblentz, D. ; Ren, Fengyuan ; Fullowan, T.R. ; Katz, Al
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A dry etch mixture based on HI/H2 is shown to provide smooth, equirate removal of InP and InGaAsP at rates of approximately 2000 AA min-1 even for very low (-100 V) DC biases on the sample. This is significantly faster than the rates obtained with the more conventional CH4/H2 mixtures commonly used for dry etching of InP-based heterostructures. Metal masks (Ni, Pt, Mo, Ti and Al) show minimal erosion during exposure to HI/H2 discharges, and other common masking materials (Au, SiO2) also show very low removal rates (<20 AA min-1) for low (\n\n\t\t
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; hydrogen; hydrogen compounds; indium compounds; sputter etching; 100 to 200 V; 3.3 nm/s; Al; Au; HI-H 2 gas mixture; InGaAsP substrate; InP substrate; InP-InGaAsP heterostructures; Mo; Ni; Pt; SiO 2; Ti; dry etching; equirate removal; high-rate dry etch mixture; masking materials; metal masks; selectivity; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920282
