Title :
Degradation of metal-oxide-semiconductor characteristics due to borophosphosilicate-glass reflow in O2-containing ambient
Author :
Lo, G.Q. ; Kwong, D.L. ; Lee, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The authors report the effects of post-gate processing in an O2-containing ambient (⩽40% in N2), such as the source/drain annealing, and the borophosphosilicate-glass (BPSG) densification and reflow, on the metal-oxide-semiconductor (MOS) device characteristics. Compared to devices processed in a pure N2 ambient during the BPSG reflow (and with a low O2 concentration for the source/drain anneal and the BPSG densification), it is found that devices processed in the O2-containing ambient show a significantly degraded low-field breakdown characteristics (e.g., 102-104×higher gate leakage current) when electron injection takes place at the polycrystalline silicon (poly-Si)/SiO2 interface. Results suggest that the BPSG reflow in an O2-containing ambient might induce some positive charges near the poly-Si/SiO2 interface and results in a lowered tunneling barrier and/or an enhanced injecting electric field
Keywords :
annealing; borosilicate glasses; densification; insulated gate field effect transistors; interface electron states; leakage currents; metal-insulator-semiconductor devices; phosphosilicate glasses; semiconductor technology; tunnelling; B2O3-P2O5-SiO2; BPSG densification; BPSG reflow; MOS capacitors; MOSFET; O2 containing ambient; O2-N2; Si-SiO2 interface; borophosphosilicate-glass reflow; densification; electron injection; gate leakage current; injecting electric field; low-field breakdown characteristics; metal-oxide-semiconductor characteristics; performance degradation; positive charges; post-gate processing; source/drain annealing; tunneling barrier; Annealing; Capacitance; Degradation; Electron devices; MOSFET circuits; Microwave devices; Microwave theory and techniques; Oxidation; Solid state circuits; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
