Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Author

Kwon, Youngwoo ; Pavlidis, Dimitris ; Marsh, Phil ; Ng, Geok-Ing ; Brock, Timothy L.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

41

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

1

Lastpage

8

Abstract

Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); 0.9 dB; EHF; InAlAs-InGaAs; InP substrate; LO power; RF frequency; W-band; conversion gain; gate bias; monolithic HEMT mixer; performance analysis; semiconductors; Frequency conversion; Frequency measurement; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Mixers; Performance analysis; Power measurement; Radio frequency;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.210222

Filename

210222