• DocumentCode
    883573
  • Title

    High power, 60 W quasi-CW, visible laser diode arrays

  • Author

    Nam, D.W. ; Welch, D.F. ; Scifres, D.R.

  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • Firstpage
    451
  • Lastpage
    452
  • Abstract
    Visible spectrum diode arrays have been fabricated from (AlxGa1-x)0.5In0.5P-Ga0.4In0.6P quantum well heterostructures operating to high output powers at wavelengths of approximately 690 nm. Bars 7.5 mm long with 110 mu m broad area emitting apertures on 125 mu m centers have reached quasi-CW output powers of 60 W.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor laser arrays; semiconductor quantum wells; (Al xGa 1-x) 0.5In 0.5P-Ga 0.4In 0.6P; 110 micron; 60 W; 690 nm; 7.5 mm; broad area emitting apertures; high output powers; output powers; quantum well heterostructures; quasi-CW; semiconductors; visible laser diode arrays; wavelengths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920284
  • Filename
    126430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=883573