Title :
High power, 60 W quasi-CW, visible laser diode arrays
Author :
Nam, D.W. ; Welch, D.F. ; Scifres, D.R.
Abstract :
Visible spectrum diode arrays have been fabricated from (AlxGa1-x)0.5In0.5P-Ga0.4In0.6P quantum well heterostructures operating to high output powers at wavelengths of approximately 690 nm. Bars 7.5 mm long with 110 mu m broad area emitting apertures on 125 mu m centers have reached quasi-CW output powers of 60 W.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor laser arrays; semiconductor quantum wells; (Al xGa 1-x) 0.5In 0.5P-Ga 0.4In 0.6P; 110 micron; 60 W; 690 nm; 7.5 mm; broad area emitting apertures; high output powers; output powers; quantum well heterostructures; quasi-CW; semiconductors; visible laser diode arrays; wavelengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920284
