Low-frequency noise in SOI four-gate transistors

Author

Akarvardar, K. ; Dufrene, B.M. ; Cristoloveanu, S. ; Gentil, P. ; Blalock, B.J. ; Mojarradi, M.M.

Author_Institution

Ecole Nat. Superieure d´´Electronique et de Radioelectricite de Grenoble, Inst. de Microelectronique, Grenoble, France

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

829

Lastpage

835

Abstract

Low-frequency noise characteristics of the silicon-on-insulator four-gate transistor [G⁴-field-effect transistor] are reported. The noise power spectral density as a function of biasing conditions is presented and compared for surface and volume conduction modes. It is shown that, for the same drain current, the volume of the transistor generates less noise than its surface. The possible transition from carrier-number fluctuations to mobility fluctuations as the conducting channel is moved away from the surface toward the volume is also discussed.

Keywords

carrier mobility; junction gate field effect transistors; semiconductor device noise; silicon-on-insulator; G4 field effect transistor; carrier-number fluctuations; conducting channel; drain current; junction field-effect transistor; mobility fluctuations; noise power spectral density; silicon on insulator; surface conduction modes; volume conduction modes; FETs; Fluctuations; Low-frequency noise; MOSFET circuits; Microelectronics; Noise generators; Propulsion; Sensor systems; Silicon on insulator technology; Transconductance; Junction field-effect transistor (JFET); MOSFET; low-frequency noise; multiple-gate transistor; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870272

Filename

1610916