Low-frequency noise in SOI four-gate transistors

Low-frequency noise characteristics of the silicon-on-insulator four-gate transistor [G⁴-field-effect transistor] are reported. The noise power spectral density as a function of biasing conditions is presented and compared for surface and volume conduction modes. It is shown that, for the same drain current, the volume of the transistor generates less noise than its surface. The possible transition from carrier-number fluctuations to mobility fluctuations as the conducting channel is moved away from the surface toward the volume is also discussed.