Title :
Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors
Author :
Yan, R.H. ; Simes, R.J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A normally-on electroabsorptive surface-normal Fabry-Perot reflection modulator is reported with an on/off ratio of 22, insertion loss of 3.7 dB, and bandwidth of 3.4 nm for an operating voltage swing of 11 V. The asymmetric Fabry-Perot structure is made with asymmetric mirrors using a quarter-wavelength grating of 15 1/2-periods on the bottom and an air-semiconductor interface on the top. The active region is 1.4 mu m thick and composed of 100AA GaAs/100 A Al/sub 0.2/Ga/sub 0.8/As multiple quantum wells. The structure provides both high-efficiency and bandwidth for surface-normal modulators.<>
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; electro-optical devices; electroabsorption; gallium arsenide; mirrors; optical modulation; semiconductor quantum wells; 1.4 micron; 100 AA; 3.7 dB; Fabry-Perot reflection modulators; GaAs-Al/sub 0.2/Ga/sub 0.8/As; III-V semiconductor; active region; air-semiconductor interface; asymmetric mirrors; asymmetric structure; bandwidth; electroabsorptive; high-efficiency; insertion loss; multiple quantum wells; on/off ratio; operating voltage swing; quarter-wavelength grating; surface-normal; surface-normal modulators; Bandwidth; Fabry-Perot; Gratings; Mirrors; Optical losses; Optical modulation; Optical reflection; Reflectivity; Resonance; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
