DocumentCode
883677
Title
Ion drift effect in silicon p-n junctions formed by sodium ion bombardment
Author
Waldner, Manuela
Volume
54
Issue
9
fYear
1966
Firstpage
1187
Lastpage
1188
Keywords
Breakdown voltage; Capacitance; Diodes; Electric breakdown; P-n junctions; Plasma temperature; Pulse measurements; Silicon; Temperature dependence; Testing;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1966.5066
Filename
1446996
Link To Document