A simulation study on novel field stop IGBTs using superjunction

Author

Oh, Kwang-Hoon ; Lee, Jaegil ; Lee, Kyu-Hyun ; Kim, Young Chul ; Yun, Chongman

Author_Institution

Fairchild Semicond., Kyunggi-Do, South Korea

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

884

Lastpage

890

Abstract

Performing device simulation, a novel insulated gate bipolar transistor (IGBT) that employs the superjunction as well as field stop (FS), has been investigated. For a planar 1200-V IGBT, the novel superjunction FS IGBT demonstrates the remarkable device performance such as the ON-state voltage drop of 1.6 V and switching-off energy of 20 μJ/A at the collector current density of 100 A/cm², which is considered as the best tradeoff performance in its class. In addition, the impact of various design parameters on device performance has been explored, and a comprehensive analysis for understanding of the operating mechanism is presented, which will be of help for realizing the SJFS IGBTs with optimum design.

Keywords

current density; insulated gate bipolar transistors; semiconductor device models; semiconductor device testing; collector current density; device simulation; field stop IGBT; insulated gate bipolar transistor; superjunction; Conductivity; Current density; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Power MOSFET; Power semiconductor devices; Substrates; Voltage; Field stop (FS); insulated gate bipolar transistor (IGBT); nonpunchthrough (NPT); superjunction (SJ);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870278

Filename

1610923