• DocumentCode
    8837
  • Title

    High quantum efficiency deep ultraviolet 4HSiC photodetectors

  • Author

    Sampath, A.V. ; Rodak, L.E. ; Chen, Yuanfeng ; Zhou, Qu ; Campbell, Joe C. ; Shen, Haiying ; Wraback, M.

  • Author_Institution
    Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
  • Volume
    49
  • Issue
    25
  • fYear
    2013
  • fDate
    December 5 2013
  • Firstpage
    1629
  • Lastpage
    1630
  • Abstract
    4H-SiC p-n--metal photodetectors are demonstrated having high external quantum efficiency >~40% in the deep ultraviolet spectrum between 200 and 235 nm. This improvement is attributed to the improved collection of carriers generated by deep ultraviolet photons through absorption in the depletion region of the detector.
  • Keywords
    photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC p-n--metal photodetectors; SiC; absorption; carrier collection; deep ultraviolet 4H- SiC photodetectors; deep ultraviolet photons; deep ultraviolet spectrum; depletion region; quantum efficiency; wavelength 200 nm to 235 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.2889
  • Filename
    6678466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=8837