DocumentCode :
88374
Title :
Large Vertical Displacement Electrostatic Zipper Microstage Actuators
Author :
Felder, Jason ; Lee, Eugene ; DeVoe, Don L.
Author_Institution :
Dept. of Mech. Eng., Univ. of Maryland, College Park, MD, USA
Volume :
24
Issue :
4
fYear :
2015
fDate :
Aug. 2015
Firstpage :
896
Lastpage :
903
Abstract :
An out-of-plane electrostatic microactuator delivering exceptionally high vertical displacements is described. The devices, based on an electrostatic zipper actuator design, employ composite Si/SiO2 beams with engineered stress gradients that result in large and controllable beam curvatures. The microactuators are fabricated in a silicon-on-insulator/deep reactive-ion etching process, with an additional oxidized silicon wafer serving as a bonded ground electrode. Simple cantilever Si/SiO2 zipper actuators are investigated and extended to a meander configuration with regions of variable curvature able to produce large tip deflections in a small on-chip footprint. An analytic model is presented and used to optimize deflection of the meander-shaped zipper actuators, followed by the implementation of a full microstage actuator employing parallel meanders connected to a moving silicon stage. Using this configuration, purely vertical actuation is realized. The static deflections of various actuator designs are characterized and shown to be in a good agreement with analytical predictions. Fabricated microstage actuators achieving deflections up to 60% of their in-plane dimensions are described, and reliable actuation over nearly 106 Hz is demonstrated.
Keywords :
electrostatic actuators; microactuators; silicon compounds; silicon-on-insulator; sputter etching; Si-SiO2; analytic model; deep reactive-ion etching; electrostatic zipper actuator design; electrostatic zipper microstage actuators; ground electrode; meander-shaped zipper actuators; on-chip footprint; out-of-plane electrostatic microactuator; oxidized silicon wafer; silicon-on-insulator; Actuators; Dielectrics; Electrodes; Electrostatics; Silicon; Structural beams; Substrates; Microactuators; curved beam actuators; electrostatic transduction;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2014.2358294
Filename :
6911983
Link To Document :
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