Title :
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
Author :
Kumar, M.J. ; Orouji, Ali Asghar ; Dhakad, H.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
fDate :
4/1/2006 12:00:00 AM
Abstract :
A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.
Keywords :
MOSFET; nanostructured materials; surface potential; 2D simulation; 90 nm; analytical threshold voltage model; dual material; nanoscale MOSFET; short-channel effect; surface potential; surrounding gate; Analytical models; Boundary conditions; Channel bank filters; Electrostatics; MOSFET circuits; Predictive models; Semiconductor device modeling; Silicon; Threshold voltage; Two dimensional displays; Device scaling; insulated gate field effect transistor; short-channel effects (SCEs); surrounding-gate (SGT) MOSFET; threshold voltage; two-dimensional (2-D) modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.870422
