Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-κ MISFETs

The authors found the method to form HfSiON film with an ultrathin SiO₂ interfacial layer on the Si substrate by oxidizing the HfSiN. The HfSiN film was deposited by using the metal-organic chemical vapor deposition reactor with the shower head, supplying metal (Hf and Si) precursors and NH₃ gas separately from discharge nozzles. The authors successfully decreased the leakage current of the metal insulator semiconductor diode with HfSiON/SiO₂ insulator of 1-nm equivalent oxide thickness to 0.036 A/cm² at V_fb-1 V.