DocumentCode
883806
Title
Microwave characterization of GaAs MESFET and the verification of device model
Author
Cooper, John F. ; Gupta, Madhu S.
Volume
12
Issue
3
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
325
Lastpage
329
Abstract
The elements in the small-signal equivalent circuit model of a microwave GaAs MESFET have been related to the device parameters (i.e., device structure, semiconductor properties, and operating point) by device theories. This equivalent circuit is experimentally verified by small-signal 3-GHz microwave measurements at room and liquid-nitrogen temperatures. The method used for determining the values of equivalent circuit parameters is briefly described.
Keywords
Equivalent circuits; Schottky gate field effect transistors; Semiconductor device models; Solid-state microwave devices; equivalent circuits; semiconductor device models; solid-state microwave devices; Bit rate; CMOS technology; Clocks; Frequency; Gallium arsenide; Integrated circuit technology; MESFETs; Microwave devices; Power dissipation; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050905
Filename
1050905
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