Title :
Microwave characterization of GaAs MESFET and the verification of device model
Author :
Cooper, John F. ; Gupta, Madhu S.
fDate :
6/1/1977 12:00:00 AM
Abstract :
The elements in the small-signal equivalent circuit model of a microwave GaAs MESFET have been related to the device parameters (i.e., device structure, semiconductor properties, and operating point) by device theories. This equivalent circuit is experimentally verified by small-signal 3-GHz microwave measurements at room and liquid-nitrogen temperatures. The method used for determining the values of equivalent circuit parameters is briefly described.
Keywords :
Equivalent circuits; Schottky gate field effect transistors; Semiconductor device models; Solid-state microwave devices; equivalent circuits; semiconductor device models; solid-state microwave devices; Bit rate; CMOS technology; Clocks; Frequency; Gallium arsenide; Integrated circuit technology; MESFETs; Microwave devices; Power dissipation; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050905
