Title :
High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology
Author :
Schreiber, H.-U.
Author_Institution :
Mikroelektronik-Zentrum, Ruhr-Univ. Bochum, Germany
Abstract :
A process technology is presented for a selfaligned double mesa Si/SiGe HBT. The technology is based on ion implanted device contacts and on the formation of an oxide spacer surmounting the emitter mesa edge, thus permitting a simple separation of base and emitter metal contacts. Transit frequency measurements resulted in 39 GHz (VCB=1 V).
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor materials; semiconductor technology; silicon; 39 GHz; HBT; Si-SiGe; double mesa; heterojunction bipolar transistor; high speed device; ion implanted device contacts; oxide spacer; process technology; selfalignment technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920306
