Title :
A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETs
Author :
Eskandarian, A. ; Weinreb, S.
Author_Institution :
Martin Marietta Labs., Baltimore, MD, USA
fDate :
1/1/1993 12:00:00 AM
Abstract :
New expressions for determination of the parasitic inductances Lg, Ld, and Ls in the small-signal equivalent circuit of high-frequency field effect transistors (FETs) are derived, based on the active/passive (also known as hot/cold) measurement technique. These equations are required when the size of parasitic capacitances is such that their effect on the forward-biased gate measurement cannot be ignored, as has been the case with the millimeter-wave transistors. The method produces an equivalent circuit which has been used successfully for design of multistage amplifiers at 60 and 94 GHz
Keywords :
S-parameters; capacitance; equivalent circuits; field effect transistors; inductance; semiconductor device models; solid-state microwave devices; 60 GHz; 90 GHz; HEMT; MESFET; MM-wave devices; MODFET; experimental determination; field effect transistors; forward-biased gate measurement; high-frequency; millimeter-wave FETs; parasitic capacitances; parasitic inductances; small-signal equivalent circuit; Equivalent circuits; FETs; Frequency measurement; Measurement techniques; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Scattering parameters; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
