A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETs

Author

Eskandarian, A. ; Weinreb, S.

Author_Institution

Martin Marietta Labs., Baltimore, MD, USA

Volume

41

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

159

Lastpage

162

Abstract

New expressions for determination of the parasitic inductances L_g, L_d, and L_s in the small-signal equivalent circuit of high-frequency field effect transistors (FETs) are derived, based on the active/passive (also known as hot/cold) measurement technique. These equations are required when the size of parasitic capacitances is such that their effect on the forward-biased gate measurement cannot be ignored, as has been the case with the millimeter-wave transistors. The method produces an equivalent circuit which has been used successfully for design of multistage amplifiers at 60 and 94 GHz

Keywords

S-parameters; capacitance; equivalent circuits; field effect transistors; inductance; semiconductor device models; solid-state microwave devices; 60 GHz; 90 GHz; HEMT; MESFET; MM-wave devices; MODFET; experimental determination; field effect transistors; forward-biased gate measurement; high-frequency; millimeter-wave FETs; parasitic capacitances; parasitic inductances; small-signal equivalent circuit; Equivalent circuits; FETs; Frequency measurement; Measurement techniques; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.210247

Filename

210247