DocumentCode :
883864
Title :
The compressive nature of optical detection in GaAs MESFETs and possible application as an RF logarithmic amplifier
Author :
Madjar, Asher ; Paollela, Arthur ; Herczfeld, Peter R.
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
41
Issue :
1
fYear :
1993
fDate :
1/1/1993 12:00:00 AM
Firstpage :
165
Lastpage :
167
Abstract :
The photodetection mechanisms in GaAs MESFETs have been investigated by several researchers. The authors have previously performed an in-depth study of the MESFET as an optical detector under constant illumination involving both experimental and theoretical modeling. In this work, they discuss the compressive nature of that photodetection process. Experimental results involving constant illumination, modulated light and pulsed illumination verify the theoretical conclusions. A suggested structure for an RF logarithmic amplifier based on the above phenomenon is presented
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photodetectors; photovoltaic effects; radiofrequency amplifiers; GaAs; MESFETs; RF logarithmic amplifier; compressive nature; constant illumination; log amp; modulated light; optical detection; photodetection mechanisms; pulsed illumination; Gallium arsenide; Lighting; MESFETs; Optical amplifiers; Optical detectors; Optical modulation; Optical pulses; Pulse amplifiers; Pulse modulation; Radio frequency;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.210249
Filename :
210249
Link To Document :
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