Second breakdown phenomenon of point contact n n⁺Si wafers

Author

Agatsuma, T.

Volume

Issue

fYear

1966

Firstpage

1206

Lastpage

1207

Keywords

Breakdown voltage; Calibration; Circuits; Conductivity; Diodes; Electric breakdown; Probes; Semiconductor films; Substrates; Transistors;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

DOI

10.1109/PROC.1966.5084

Filename

1447014

Link To Document