DocumentCode :
883875
Title :
Second breakdown phenomenon of point contact n n
+
Si wafers
Author :
Agatsuma, T.
Volume :
54
Issue :
9
fYear :
1966
Firstpage :
1206
Lastpage :
1207
Keywords :
Breakdown voltage; Calibration; Circuits; Conductivity; Diodes; Electric breakdown; Probes; Semiconductor films; Substrates; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5084
Filename :
1447014
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=883875
