Title :
Comments on "Josephson effect gain and noise in SIS mixers" [with reply]
Author :
Jablonski, D.G. ; Wengler, M.T.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Abstract :
For the original article see ibid., vol.40, no.5, p.820-6 (1992). The commenter points out that, in the above-titled paper by M.J. Wengler et al., no references published prior to 1982 are cited. As a result, no mention is made of a considerable body of relevant published work. The commenter discusses some of this earlier work. One of the authors, M.J. Wengler, replies that the earlier work all used point contact junctions with low capacitance and with nonhysteretic current-voltage (I-V) curves which fit the resistively shunted Josephson junction (RSJ) circuit model, whereas he and his coauthors considered planar SIS diodes with higher capacitance and with completely hysteretic I-Vs which are not even similar to the RSJ model predictions. He offers some further discussion of the ways in which their results are distinct from the earlier work.<>
Keywords :
Josephson effect; electron device noise; mixers (circuits); solid-state microwave devices; superconducting junction devices; Josephson effect gain; Josephson junction; SIS mixers; THF; hysteretic I-V curves; noise; planar SIS diodes; Capacitance; Chaos; Josephson effect; Josephson junctions; Microwave theory and techniques; Superconducting device noise; Superconducting devices; Superconducting microwave devices; Temperature; Tunneling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on