Analysis of forward-bias p-i-n-diode inductive driving

Published literature on p-i-n-diode driving circuits for phase-shifter applications is rather rare and contains descriptions or analyses of driving circuits with at least two high-power transistors as output devices. This paper presents design criteria for a high-power p-i-n-diode inductive driver, as well as analytical and experimental results for the forward-bias transition of p-i-n-diodes. Expressions are developed that enable one to predict the switching waveforms and the p-i-n-diode storage charge with very good accuracy. In developing these expressions the effects of circuit parameters and the parasitic capacitance due to the p-i-n-diode packaging and phase-shifter mounting have been taken into account.