Title :
Design for a Tunnel Diode-Transistor Store with Nondestructive Read-Out of Information
Author_Institution :
Physics Dept., University of Auckland, Auckland, New Zealand.
Abstract :
The design of a random-access, word-organized storage system with nondestructive read-out of information is described. The storage element upon which the design is based consists of a tunnel diode-transistor combination. Measurements on a simulated store of 16 words ×24 digits capacity indicate that cycle times of approximately 40 nsec for Read orders and 65 nsec for Write orders can be achieved.
Keywords :
Design for experiments; Diodes; Electronic equipment testing; Logic testing; Personnel; Regression analysis; Statistical analysis; System testing; Telephony; Transient analysis;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1964.263905
