Title :
GaAs MESFET logic with 4-GHz clock rate
Author :
Van Tuyl, Rory L. ; Liechti, Charles A. ; Lee, Robert E. ; Gowen, Elmer
fDate :
10/1/1977 12:00:00 AM
Abstract :
Monolithic digital ICs with GaAs MESFETs have been built and operated at clock frequencies up to 4.5 GHz. The fabrication process uses selenium-implanted n-channels and a two-level Cr-Pt-Au metallization with 1-μm linewidth and 1-μm alignment tolerances. NOR gates with 86-ps propagation delay and 40-mW power consumption have been realized. Binary frequency dividers have been designed with master-slave flip-flops operating from dc up to an average maximum frequency of 4 GHz. In addition, more complex circuits have been integrated on single chips. A general-purpose octal counter with input gating and output buffering and an 8-bit multiplexer/serial data generator exhibit stable and reliable operation.
Keywords :
Field effect integrated circuits; Frequency dividers; Integrated logic circuits; Schottky gate field effect transistors; field effect integrated circuits; frequency dividers; integrated logic circuits; Clocks; Energy consumption; Fabrication; Frequency conversion; Gallium arsenide; Logic; MESFETs; Master-slave; Metallization; Propagation delay;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050941
