Title :
Techniques for reducing the peak power of a switching transistor with p-i-n diode load
Author :
Georgopoulos, Chris J.
fDate :
10/1/1977 12:00:00 AM
Abstract :
Describes techniques for reducing the peak power of switching transistor that reverse biases a p-i-n diode load. Particular emphasis is placed on a parallel combination of a Zener diode and an inductor and it is shown that, for an experimental p-i-n driver, the peak power is reduced from 252 to 90 W.
Keywords :
Bipolar transistors; Semiconductor diodes; Semiconductor switches; bipolar transistors; semiconductor diodes; semiconductor switches; Clamps; Impedance; Inductors; P-i-n diodes; Resistors; Stress; Switching circuits; Virtual manufacturing; Virtual reality; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050951
