DocumentCode
884366
Title
Linear compatible I/SUP 2/L technology with high voltage transistors
Author
Bergmann, GÜnther
Volume
12
Issue
5
fYear
1977
fDate
10/1/1977 12:00:00 AM
Firstpage
566
Lastpage
572
Abstract
A technology is proposed in which it is possible to realize both I/SUP 2/L circuits and linear transistors with V/SUB CBO/ of 60 V. The essential step in such a technology is an additional n/SUP +/-flat diffusion. The technological parameters are derived. From measurements on wafers processed in the outlined technology. The author established functioning I/SUP 2/L elements and high voltage transistors.
Keywords
Bipolar integrated circuits; Integrated logic circuits; bipolar integrated circuits; integrated logic circuits; Atomic layer deposition; Breakdown voltage; Contact resistance; Doping profiles; Epitaxial layers; Niobium; Region 5; Safety; Space technology; Surface resistance;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1977.1050956
Filename
1050956
Link To Document