DocumentCode :
884394
Title :
MOVPE grown Ga0.6In0.4Sb photodiodes for 2.55 mu m detection
Author :
Pascal-Delannoy, F. ; Bouganot, J. ; Allogho, G.G. ; Giani, Annarita ; Gouskov, L. ; Bougnot, G.
Author_Institution :
Univ. de Montpellier Sci. et Tech. du Languedoc, France
Volume :
28
Issue :
6
fYear :
1992
fDate :
3/12/1992 12:00:00 AM
Firstpage :
531
Lastpage :
532
Abstract :
Photodiodes with a long-wavelength cutoff extending out of 2.9 mu m have been fabricated from MOVPE-grown Ga0.6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60 mu m.
Keywords :
III-V semiconductors; gallium compounds; indium antimonide; infrared detectors; photodiodes; semiconductor growth; vapour phase epitaxial growth; 2.55 to 2.9 micron; 43 percent; Ga 0.6In 0.4Sb photodiodes; GaSb substrate; IR detection; MOVPE growth; long-wavelength cutoff; mesa devices; peak efficiency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920335
Filename :
126481
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=884394
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