Title :
An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology
Author :
Chan, Beckie ; Oyama, Bert ; Monier, Cedric ; Gutierrez-Aitken, Augusto
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
Abstract :
An ultra-wideband 7-bit 5-Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 mum Indium-Phosphide (InP) heterojunction bipolar transistor (HBT) technology, is presented. This monolithic folding/interpolating ADC includes a front-end master-slave sample and hold and a pipeline stage sample and hold. The chip achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps, while dissipating 8.4 W. Furthermore, an ENoB performance of greater than 5.7 is maintained at analog input frequencies up to 7.5 GHz. This effective resolution-bandwidth product performance is significantly higher than any other previously reported monolithic ADC with sample rate ges 3 Gsps.
Keywords :
Nyquist criterion; analogue-digital conversion; heterojunction bipolar transistors; indium compounds; ultra wideband technology; InP; Nyquist performance; analog-to-digital converter; front-end master-slave sample and hold; heterojunction bipolar transistor; pipeline stage sample and hold; power 8.4 W; resolution-bandwidth product; size 0.8 mum; submicron HBT technology; ultra wideband monolithic folding/interpolating ADC; Analog-digital conversion; Bridge circuits; Frequency; Heterojunction bipolar transistors; Indium phosphide; Linearity; Preamplifiers; Sampling methods; Schottky diodes; Ultra wideband technology; ADC; InP HBT; folding; interpolating; ultra-wideband data conversion;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2002932
