DocumentCode :
884484
Title :
A Low-Power Fully Monolithic Subthreshold CMOS Receiver With Integrated LO Generation for 2.4 GHz Wireless PAN Applications
Author :
Perumana, Bevin George ; Mukhopadhyay, Rajarshi ; Chakraborty, Sudipto ; Chang-Ho Lee ; Laskar, Joy
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Volume :
43
Issue :
10
fYear :
2008
Firstpage :
2229
Lastpage :
2238
Abstract :
This paper reports a fully monolithic subthreshold CMOS receiver with integrated subthreshold quadrature LO chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage boosting, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling have been combined to lower the total power consumption. The subthreshold receiver, consisting of the switched-gain low noise amplifier, the quadrature mixers, and the variable gain amplifiers, consumes only 1.4 mW of power and has a gain of 43 dB and a noise figure of 5 dB. The entire quadrature LO chain, including a stacked quadrature VCO and differential cross-coupled buffers, also operates in the subthreshold region and consumes a total power of 1.2 mW. The subthreshold receiver with integrated LO generation is implemented in a 0.18 mum CMOS process. The receiver has a 3-dB IF bandwidth of 95 MHz.
Keywords :
CMOS integrated circuits; low noise amplifiers; personal area networks; radio receivers; receivers; bandwidth 95 MHz; frequency 2.4 GHz; integrated LO generation; low-power circuit techniques; low-power fully monolithic subthreshold CMOS receiver; passive voltage boosting; power 1.2 mW; quadrature mixers; size 0.18 mum; switched-gain low noise amplifier; variable gain amplifiers; wireless PAN; Boosting; CMOS process; Coupling circuits; Energy consumption; Gain; Low-noise amplifiers; Noise figure; Stacking; Voltage; Voltage-controlled oscillators; Low-power RF front-ends; metal-oxide-semiconductor field-effect transistors (MOSFETs); weak inversion; wireless personal area networks;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.2004330
Filename :
4639529
Link To Document :
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