DocumentCode :
884565
Title :
A Large Swing, 40-Gb/s SiGe BiCMOS Driver With Adjustable Pre-Emphasis for Data Transmission Over 75 \\Omega Coaxial Cable
Author :
Aroca, Ricardo Andres ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Toronto, ON
Volume :
43
Issue :
10
fYear :
2008
Firstpage :
2177
Lastpage :
2186
Abstract :
A fully differential 40-Gb/s cable driver with adjustable pre-emphasis is presented. The circuit is fabricated in a production 0.18 mum SiGe BiCMOS technology. A distributed limiting architecture is used for the driver employing high-speed HBTs in the lower voltage predriver, and a high-breakdown MOS-HV-HBT cascode, consisting of a 0.18 mum n-channel MOSFET and a high-voltage HBT (HV-HBT), for the high voltage output stages. The circuit delivers up to 3.6 V peak-to-peak per side into a 75 Omega load with variable pre-emphasis ranging from 0 to 400%. S-parameter measurements show 42 dB differential small-signal gain, a 3-dB bandwidth of 22 GHz, gain peaking control up to 25 dB at 20 GHz and input and output reflection coefficients better than -10 dB up to 40 GHz. Additional features of the driver include output amplitude control (from 1 Vpp to 3.6 Vpp per side), pulse-width control (35% to 65%) and an adjustable input dc level (1.1 V to 1.8 V) allowing the circuit to interface with a SiGe BiCMOS or MOS-CML SERDES. The transmitter is able to generate an eye opening at 38 Gb/s after 10 m of Belden 1694 A coaxial cable which introduces 22 dB of loss at 19 GHz. Measurement results also demonstrate that the transmitter IC operates as a standalone equalizer for 10-Gb/s data transmission over 40 m of Belden cable without the need for receiver equalization.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; coaxial cables; heterojunction bipolar transistors; optical cables; optical fibre communication; optical transmitters; Belden cable; HBT; MOS-HV-HBT cascode; SiGe; SiGe BiCMOS driver; bandwidth 22 GHz; bit rate 10 Gbit/s; bit rate 38 Gbit/s; bit rate 40 Gbit/s; coaxial cable; frequency 19 GHz; high-voltage HBT; n-channel MOSFET; reflection coefficients; resistance 75 ohm; BiCMOS integrated circuits; Coaxial cables; Data communication; Driver circuits; Germanium silicon alloys; MOSFET circuits; Production; Silicon germanium; Transmitters; Voltage; Amplitude control; SiGe BiCMOS; cable equalizers; high speed data communication; modulator drivers; optical fiber communication; pre-emphasis;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.2002928
Filename :
4639538
Link To Document :
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