DocumentCode :
884578
Title :
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
Author :
Nicolson, Sean T. ; Chevalier, Pascal ; Sautreuil, Bernard ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
Volume :
43
Issue :
10
fYear :
2008
Firstpage :
2206
Lastpage :
2217
Abstract :
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, particularly within the automotive radar band of 77-81 GHz. A 1.3 mm times 0.9 mm 86-96 GHz receiver is also presented. The transceiver, fabricated in a 130 nm SiGe HBT technology with fT/fMAX of 230/300 GHz, consumes 780 mW, and occupies 1.3 mm times 0.9 mm of die area. Furthermore, it achieves 40 dB conversion gain in the receiver at 82 GHz, a 3 dB bandwidth extending from 77 to 85 GHz at 25degC, and covering the entire 77-81 GHz band up to 100degC, record 3.85 dB DSB noise figure measured at 82 GHz LO and 1 GHz IF, and an IP1dB of -35 dBm. The transmitter provides + 11.5 dBm of saturated output power at 77 GHz, and a divide64 static frequency divider is included on-die. Successful detection of a Doppler shift of 30 Hz at a range of 6 m is shown. The 86-96 GHz receiver achieves 31 dB conversion gain, a 3 dB bandwidth of 10 GHz, and 5.2 dB DSB noise figure at 96 GHz LO and 1 GHz IF, and -99 dBc/Hz phase noise at 1 MHz offset. System-level layout and integration techniques that address the challenges of low-voltage transceiver implementation are also discussed.
Keywords :
Doppler radar; Doppler shift; Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; millimetre wave imaging; phase noise; radar receivers; road vehicle radar; semiconductor materials; transceivers; Doppler radar; Doppler shift; SiGe; automotive radar band; distance 6 m; frequency 1 GHz; frequency 1 MHz; frequency 230 GHz; frequency 30 Hz; frequency 300 GHz; frequency 77 GHz to 85 GHz; frequency 86 GHz to 96 GHz; frequency divider; gain 31 dB; gain 40 dB; integration techniques; low-voltage transceiver implementation; millimeter-wave imaging; noise figure 3.85 dB; phase noise; power 780 mW; receivers; single-chip W-band HBT transceivers; system-level layout; temperature 100 degC; temperature 25 degC; transmitter; Bandwidth; Doppler radar; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave radar; Millimeter wave technology; Noise figure; Silicon germanium; Transceivers; Automotive radar; Doppler radar; SiGe HBT; W-band transceivers; correlation; low-noise amplifiers; millimeter-wave imaging; noise figure; phase noise; power amplifiers;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2008.2002934
Filename :
4639540
Link To Document :
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