DocumentCode :
884635
Title :
Compact, High- Q , and Low-Current Dissipation CMOS Differential Active Inductor
Author :
Ler, Chun-Lee ; Bin A´ain, Abu Khari ; Kordesch, Albert V.
Author_Institution :
Fac. of Electr. Eng., Univ. of Technol. Malaysia, Skudai
Volume :
18
Issue :
10
fYear :
2008
Firstpage :
683
Lastpage :
685
Abstract :
This letter presents an improved, compact, and tunable high-Q differential active inductor implemented in Silterra´s industry standard 0.18 mum CMOS process. The improved differential active inductor demonstrates a Q ap 1000 at high frequency region. Low-current dissipation is achieved by reusing the current from the differential gyrator for stabilizer and negative impedance circuit. A replica bias circuit has been introduced to allow current-controlled inductance of the improved differential active inductor. Sensitivity of the improved differential active inductor to process variation is also included in this letter.
Keywords :
CMOS integrated circuits; Q-factor; gyrators; inductors; Sensitivity; Silterra industry standard; current-controlled inductance; differential active inductor; differential gyrator; high frequency region; high-Q; low-current dissipation CMOS; negative impedance circuit; quality-factor; replica bias circuit; size 0.18 mum; stabilizer; CMOS technology; Capacitance; Circuit optimization; Frequency; Gyrators; Inductance; MOSFET circuits; Resonance; Transconductance; Tuning; Active inductor; CMOS; gyrator; quality-factor;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2003465
Filename :
4639546
Link To Document :
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