On the RF Series Resistance Extraction of Nanoscale MOSFETs

Author

Choi, Gil-Bok ; Hong, Seung-Ho ; Jung, Sung-Woo ; Jeong, Yoon-Ha

Author_Institution

Pohang Univ. of Sci. & Technol., Pohang

Volume

18

Issue

10

fYear

2008

Firstpage

689

Lastpage

691

Abstract

A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mum metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.

Keywords

MOSFET; S-parameters; radiofrequency integrated circuits; regression analysis; RF series resistance extraction; linear regression techniques; metal oxide semiconductor field-effect transistor; nanoscale MOSFET; radio frequency S-parameter measurement; Electrical resistance measurement; FETs; Frequency measurement; Linear regression; MOSFETs; Nanomaterials; Optimization methods; Radio frequency; Scattering parameters; Semiconductor device noise; Extraction; metal oxide semiconductor field-effect transistor (MOSFET); modeling; radio frequency (RF); series resistance; small signal;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2003472

Filename

4639554