Title :
Time-Delay-and-Integration Charge-Coupled Devices Using Tin Oxide Gate Technology
Author :
Thompson, Leslie L. ; McCann, David H. ; Tracy, Richard A. ; Kub, Francis J. ; White, Marvin H.
fDate :
2/1/1978 12:00:00 AM
Abstract :
A time-delay-and-integration (TDI) CCD area array organized into two sections of 10 by 9 integration stages has been designed, built, and tested. The device uses four-phase buried channel construction and provides 65-percent quantum efficiency with smooth spectral response by front surface imaging through transparent doped tin oxide gates. TDI operation with forward and reverse scan clocking for bi-directional image motion has been demonstrated, with the 10 input parallel-in/serial-out output shift register operating at 1.25-MHz video rate.
Keywords :
Charge-coupled device circuits; Image sensors; Bandwidth; Charge coupled devices; Clocks; Electrodes; Infrared detectors; Remote sensing; Satellites; Signal resolution; Signal to noise ratio; Tin;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1050995
