Title :
The Resistive Gate CTD Area-Image Sensor
Author :
Heyns, Hendrik ; van Santen, J.G.
fDate :
2/1/1978 12:00:00 AM
Abstract :
The transport of charge in a resistive gate controlled PCCD channel structure is described. With the aid of time analysis it is shown that this structure can be used for column transport in a practical area-image sensor. The operating principles of this type of CTD sensor are discussed, with emphasis on blue sensitivity and antiblooming operation. A 96-element linear test circuit has been built for evaluating the expected sensor performance. Design data and some relevant measured results are presented. Results for charge transport time, modulation transfer function, and spectral responsivity illustrate the feasibility of this new solid-state sensor approach.
Keywords :
Charge-coupled device circuits; Image sensors; Circuit testing; Dielectric substrates; Electrodes; Electrons; Image sensors; Image storage; Integrated circuit measurements; Sensor phenomena and characterization; Solid state circuits; Transfer functions;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1050996
