Title :
An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation
Author :
Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Hong-Zhi ; Lin, Che-Hung ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan
Abstract :
An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Omega input and output impedance. Based on a 0.35 mum gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs-GaAs; CW operation; MMIC power amplifier; X-band high-power; continuous wave mode operation; efficiency 42 percent; efficiency 52.6 percent; frequency 9.4 GHz; gain 17.5 dB; high power added efficiency; high-PAE PHEMT; monolithic microwave integrated circuit power amplifier; power 10 W; power 12.6 W; psuedomorphic high electronic mobility transistor; pulse operation; resistance 50 ohm; size 0.35 mum; voltage 8 V; Gallium arsenide; High power amplifiers; Indium gallium arsenide; MMICs; Microwave integrated circuits; Microwave transistors; Operational amplifiers; PHEMTs; Power generation; Pulse amplifiers; Monolithic microwave integrated circuit (MMIC); X-band; power added efficiency (PAE); power amplifier (PA); psuedomorphic high electronic mobility transistor (PHEMT);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.2003485
